EM-NANO 2025

Invited speakers

Special Session on Nitride and Oxide based Wide bandgap Semiconductor Devices

Understanding and Control of Electronic States in GaN devices (Tentative)

Tamotsu Hashizume
Hokkaido University/Nagoya University

High-Frequency Performance of AlGaN/GaN HEMTs with High Al Content: A Theoretical Study

Masaaki Kuzuhara
Kwansei Gakuin University

Heteroepitaxy of Ga2O3 films using liquid-injection MOCVD: Impact of Hydrogen annealing on transport properties of MOSFETs

Milan Tapajna
Slovak Academy of Science

SCOPE A - Organic Materials and Devices for Electronics

Disordered lasers using molecular glasses or paper

Thomas Fuhrmann-Lieker
University of Kassel

Mesoporous MOFs for Biosensing

Jinlou Gu
East China University of Science and Technology

SCOPE C - Nanotechnologies for Electronics

Unconventional epitaxy for high-density vertical stack R/G/B micro-LED pixel arrays

Young Joon Hong
Sungkyunkwan University

Optical manipulation of nuclear spin polarization: Single-to-Double hysteresis transition in semiconductor nanostructures

Reina Kaji
Hokkaido University

SCOPE D1 - Photovoltaics

The Development of Halide Double Perovskites

Feng Wang
Linköping University

The trivalent metal (Bi, Sb, In) approach for Pb and Pb-free perovskites based on optoelectronic study

Ryosuke Nishikubo
Osaka University

SCOPE D2 - Energy Harvesting/ Battery Related Technologies and Materials

Design of Photoactive Materials for Intrinsically-Stretchable Polymer Solar Cells

Bumjoon J Kim
Korea Advanced Institute of Science and Technology

Spin states of organic and inorganic electronic materials and devices by operando microscopic investigation

Kazuhiro Marumoto
University of Tsukuba

SCOPE D3 - Wide Bandgap Materials and Devices

Critical issues and limitations in p-GaN HEMTs technology

Giuseppe Greco
IMM, National Research Council of Italy

AlN for ultra wide bandgap based power electronics

Ramon Collazo
North Carolina State University

SCOPE D4 - Advanced Oxide Materials and Their Applications

New progress in thermo/electrochromism: materials and devices

Yanfeng Gao
Shanghai University

Oxide-TFT-based circut and device applications for sustainable electronics

Kenji Nomura
University of California San Diego

SCOPE D6 - Carbon and Related Materials

Enhanced channel mobility of hydrogen-terminated diamond field-effect transistors utilizing a hexagonal boron nitride gate insulator

Yosuke Sasama
National Institute for Materials Science

Nanocarbon Innovation for a Carbon Circular Economy

Morinobu Endo
Shinshu University

SCOPE D7 - Spintronics

Recent progress of opto-spintronics based on semiconductor nanomaterials

Satoshi Hiura
Hokkaido University

Superconductive coupling and diode effect in topological insulator-based multi-terminal Josephson junctions

Thomas Schaepers
Jülich Research Centre

SCOPE D8 - Silicon LSI Emerging Technologies

Interface dipole engineering for multi-Vt technology of Gate-All-Around Nanosheet/CFET devices

Hiroaki Arimura
imec

Cryogenic CMOS Device Technology for Scalable Quantum Computers

Hiroshi Oka
National Institute of Advanced Industrial Science and Technology

Development of Ferroelectric Field Effect Transistor Designed by Nanomaterial Engineering

Tadashi Yamaguchi
Renesas Electronics